heavy doping
英 [ˈhevi ˈdəʊpɪŋ]
美 [ˈhevi ˈdoʊpɪŋ]
网络 重掺杂; 浓掺; 重惨杂; 重参杂
双语例句
- The analysis of current transport on base in abrupt inalas/ ingaas HBT by heavy impurity doping
基区重掺杂对InGaAs/InAlAs突变HBT电流输运的影响 - Effect of Heavy Doping on the Energy Structure of Silicon
重掺杂对Si能带结构的影响 - The characteristic of heavy doping level of tunnel junction and diffusion each other is investigated by means of Hall technique, X ray diffraction technique and SIMS.
利用霍耳测试仪、X射线双晶衍射仪、二次离子质谱仪，对隧道结的重掺杂和互扩散特性进行了研究。 - Cathodeluminescence spectra and Moss-Burstein shift of heavy doping InGaAsP
高掺杂InGaAsP材料的荧光光谱和Moss-Burstein移动 - So it is found that interlayer diffusion between Fe and Si occurred, and the diffusion overwhelmed the heavy doping of Si, which made no difference at all for the AF coupling with different type Si.
这些实验结果表明，Fe、Si之间存在一定程度的扩散，它是影响层间耦合的主要因素，远远超过了半导体意义上的重参杂，使不同种类的Si作为中间层的层间耦合基本一致； - Based on thermionic-field-diffusion model, the current transport properties of abrupt AlGaAs/ GaAs HBT with heavy doping in the base is analyzed.
基于热场发射扩散模型，分析了基区重掺杂突变AlGaAs/GaAsHBT中的电流传输特性。 - Calculation of the bandgap narrowing due to heavy doping in p-type strained si_ ( 1-x) ge_x layers
p型Si（1-x）Gex应变层中重掺杂禁带窄变的计算 - The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level.
考虑到禁带变窄效应的作用，本文导出了重掺杂硅中本征载流子浓度与温度和杂质浓度的关系式。 - There is a drift field at the back contact of BSF cell created by heavy doping.
背电场电池在背接触处以高掺杂造成一漂移场。 - Our theory can be applied not only to the alloy systems of heavy electron metals, but also to the discussion of doping effects in newly discovered heavy-fermion insulators.
该理论不仅可应用于重电子金属的合金系统，还适合于讨论最新发现的重费米子绝缘体中的掺杂效应。 - The heavy doping effects of the base disturb the form and height of energy barriers, which control the currents through these interfaces.
基区重掺杂使HBT突变结界面势垒形状及高度发生了扰动，这种扰动对电流输运特性有重要的影响。 - This model takes into account the effect of electron temperature on mobility, bandgap narrowing due to heavy doping in base region and the Ge concentration, and carrier velocity saturation in the BC junction.
该模型考虑了电子温度对迁移率的影响，基区重掺杂和Ge引起的禁带变窄效应及速度饱和效应。 - The Analysis of Currents of AlGaAs/ GaAs HBT with Heavy Doping of the Base Including Self-heating Effects
考虑自热效应的重掺杂AlGaAs/GaAsHBT电流特性分析 - Effect of Heavy Doping in the Base on Electronic Property of Abrupt AlGaAs/ GaAs HBT
基区重掺杂对突变AlGaAs/GaAsHBT电学性能的影响 - Effects of Strain Induced Splitting of Energy Bands on the Bandgap Narrowing Due to Heavy Doping in Strained Si_ ( 1-x) Ge_x Layers
应变致能带分裂对Si（1－x）Gex应变层中重掺杂禁带窄变的影响 - Heavy impurity doping makes the conduction and valence bands shift, and brings about the so-called Band Gap Narrowing ( BGN).
重掺杂使导带、价带带边同时发生了收缩，从而产生能带变窄效应（BGN）。 - The well resolved split between heavy hole and light hole of Γ valence band is shown in PzR when the N doping level is up to 1%.
当N掺杂浓度达到1%时，开始在PzR谱和PR谱中观测到Γ价带的轻重空穴分裂。 - In existing theories, the larger the grain is, the higher the gauge factor ( GF) of poly-Si films is; in the case of heavy doping concentration, the higher the doping concentration is, the lower the GF is.
现有理论认为，晶粒越大多晶硅薄膜的应变因子（GF）越大；重掺杂情况下，掺杂浓度越高多晶硅薄膜的GF愈小。 - The transmittance difference between thin films before and after NIC and the low absorption coefficient in visible range of p-Si thin films prepared by NIC was caused by MIC inherent defect of structural inhomogeneous and heavy doping. 6.
诱导前后薄膜透过率的差异以及诱导后薄膜较低的可见光吸收系数是由金属诱导固有的薄膜不均匀和重掺杂缺陷造成的。